Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.
Chichibu SF; Uedono A; Onuma T; Haskell BA; Chakraborty A; Koyama T; Fini PT; Keller S; Denbaars SP; Speck JS; Mishra UK; Nakamura S; Yamaguchi S; Kamiyama S; Amano H; Akasaki I; Han J; Sota T; Nature Materials, 2006, vol. 5, issue 10, p 810, ISSN 14761122. ISBN 14761122.

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